2010

1. J. Barzola-Quiquia, S. Dusari, G. Bridoux, F. Bern, A. Molle, and P. Esquinazi
   The influence of Ga⁺ irradiation on the transport properties of mesoscopic conducting thin films
   Nanotechnology 21, 145306 (2010)    [B1, B5]
2. S. Dusari, J. Barzola-Quiquia, P. Esquinazi, and S. P. Heluani
   Changes in the electrical transport of ZnO under visible light
   Solid State Commun. 150, 22 (2010)    [B1]
3. H. Mirhosseini, A. Ernst, and J. Henk
   Electron correlation beyond the local density approximation: self-interaction correction in gadolinium
   J. Phys.: Condens. Matter 22, 245601 (2010)    [B2]
4. M. Gradhand, D. V. Fedorov, P. Zahn, and I. Mertig
   Extrinsic Spin Hall Effect from First Principles
   Phys. Rev. Lett. 104, 186403 (2010)    [B2]
5. G. van Riessen, Z. Wei, R. S. Dhaka, C. Winkler, F. O. Schumann, and J. Kirschner
   Direct and core-resonant double photoemission from Cu(001)
   J. Phys.: Condens. Matter 22, 092201 (2010)    [B7]
6. F. O. Schumann, C. Winkler, J. Kirschner, F. Giebels, H. Gollisch, and R. Feder
   Spin-Resolved Mapping of Spin Contribution to Exchange-Correlation Holes
   Phys. Rev. Lett. 104, 087602 (2010)    [B7]
7. S. Acharya, S. Chouthe, C. Sturm, H. Graener, R. Schmidt-Grund, M. Grundmann, and G. Seifert
   Charge carrier dynamics of ZnO and ZnO-BaTiO₃ thin films
   J. Phys: Conf. Ser. 210, 012048 (2010)    [B3, A2]
8. H. Oka, P. A. Ignatiev, S. Wedekind, G. Rodary, L. Niebergall, V. S. Stepanyuk, D. Sander, and J. Kirschner
   Spin-Dependent Quantum Interference Within a Single Magnetic Nanostructure
   Science 327, 843 (2010)    [B8]
9. H. Mirhosseini, I. V. Maznichenko, S. Abdelouahed, S. Ostanin, A. Ernst, I. Mertig, and J. Henk
   Toward a ferroelectric control of Rashba spin-orbit coupling: Bi on BaTiO₃(001) from first principles
   Phys. Rev. B 81, 073406 (2010)    [B2, A4]
10. X. Gao, B. J. Rodriguez, L. Liu, B. Birajdar, D. Pantel, M. Ziese, M. Alexe, and D. Hesse
    Microstructure and properties of well-ordered multiferroic Pb(Zr,Ti)O₃/CoFe₂O₄ nanocomposites
    ACS Nano 4, 1099 (2010)    [A1, B5]
11. Y. L. Zhu, S. J. Zheng, X. L. Ma, L. Feigl, M. Alexe, D. Hesse, and I. Vrejoiu
    Microstructural evolution of [PbZr_xTi_1-xO₃/PbZr_yTi_1-yO₃]_n epitaxial multilayers (x/y = 0. 2/0. 4, 0. 4/0. 6) - dependence on layer thickness
    Philos. Mag. 90, 1359 (2010)    [A1]
12. C. Jia and J. Berakdar
    Tunneling anisotropic magnetoresistance of helimagnet tunnel junctions
    Phys. Rev. B 81, 052406 (2010)    [B7]
13. C. Jia and J. Berakdar
    Coupled spin–phonon excitations in helical multiferroics
    phys. stat. sol. (b) 247, 662 (2010)    [B7]
14. R. Zhu and J. Berakdar
    Spin-dependent pump current and noise in an adiabatic quantum pump based on domain walls in a magnetic nanowire
    Phys. Rev. B 81, 014403 (2010)    [B7]
15. L. Chotorlishvili, P. Schwab, and J. Berakdar
    Dynamic switching of the magnetization in a driven molecular nanomagnet
    J. Phys.: Condens. Matter 22, 036002 (2010)    [B7]
16. H. Frenzel, H. von Wenckstern, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann
    Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures
    AIP Conf. Proc. 1199, 469 (2010)    [B4, A2]
17. M. Brandt, H. von Wenckstern, G. Benndorf, M. Lange, C. P. Dietrich, C. Kranert, C. Sturm, R. Schmidt-Grund, H. Hochmuth, M. Lorenz, M. Grundmann, M. R. Wagner, M. Alic, C. Nenstiel, and A. Hoffmann
    Identification of a donor-related recombination channel in ZnO thin films
    Phys. Rev. B 81, 073306 (2010)    [B4, A2, B3]
18. H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, and M. Grundmann
    High-gain integrated inverters based on ZnO metal-semiconductor field-effect transistor technology
    Appl. Phys. Lett. 96, 113502 (2010)    [B4, A2]
19. J. Zippel, S. Heitsch, M. Stölzel, A. Müller, H. von Wenckstern, G. Benndorf, M. Lorenz, H. Hochmuth, and M. Grundmann
    Optical properties of homo- and heteroepitaxial ZnO/Mg_xZn_1-xO single quantum wells grown by pulsed-laser deposition
    J. Lumines. 130, 520 (2010)    [B6, A2]
20. J. Zippel, M. Stölzel, A. Müller, G. Benndorf, M. Lorenz, H. Hochmuth, and M. Grundmann
    Electronic coupling in ZnO/Mg_xZn_1-xO double quantum wells grown by pulsed-laser deposition
    phys. stat. sol. (b) 247, 398 (2010)    [B6, A2]
21. M. Fechner, I. V. Maznichenko, S. Ostanin, A. Ernst, J. Henk, and I. Mertig
    Ab initio study of magnetoelectricity in composite multiferroics
    phys. stat. sol. (b) 247, 1600 (2010)    [B2, A4]
22. M. Fechner, S. Ostanin, and I. Mertig
    Magnetoelectric coupling at biferroic interface studied from first principles
    J. Phys.: Conf. Ser. 200, 072027 (2010)    [B2]
23. A. Tange, C. L. Gao, B. Yu. Yavorsky, I. V. Maznichenko, C. Etz, A. Ernst, W. Hergert, I. Mertig, W. Wulfhekel, and J. Kirschner
    Electronic structure and spin polarization of the Fe(001)-p(1×1)O surface
    Phys. Rev. B 81, 195410 (2010)    [B6, A4]
24. M. Ziese, I. Vrejoiu, E. Pippel, P. Esquinazi, D. Hesse, C. Etz, J. Henk, A. Ernst, I. V. Maznichenko, W. Hergert, and I. Mertig
    Tailoring magnetic interlayer coupling in La_0.7Sr_0.3MnO₃/SrRuO₃ superlattices
    Phys. Rev. Lett. 104, 167203 (2010)    [A1, B2, A4, B5]
25. D. Sander, H. L. Meyerheim, Z. Tian, L. Niebergall, N. N. Negulyaev, K. Mohseni, V. S. Stepanyuk, R. Felici, and J. Kirschner
    Sequential population of adsorption sites driven by surface stress
    Phys. Rev. B 81, 153403 (2010)    [B8, A5]
26. Z. Tian, D. Sander, N. N. Negulyaev, V. S. Stepanyuk, and J. Kirschner
    H- and O-induced compressive surface stress on Pt(111): Experiments and density functional theory calculations
    Phys. Rev. B 81, 113407 (2010)    [B8]
27. K.-S. Kim and C. Jia
    z=3 Antiferromagnetic Quantum Criticality Driven by the Kondo Effect
    Phys. Rev. Lett. 104, 156403 (2010)    [B7]
28. C. Jia and J. Berakdar
    Functionalization of multiferroic oxide structures for spintronic devices
    Proc. SPIE 7603, 76030O (2010)    [B7]
29. D. Pantel, Y.-H. Chu, L. W. Martin, R. Ramesh, D. Hesse, and M. Alexe
    Switching kinetics in epitaxial BiFeO₃ thin films
    J. Appl. Phys. 107, 084111 (2010)    [A1]
30. M. Ziese, I. Vrejoiu, and D. Hesse
    Structural symmetry and magnetocrystalline anisotropy of SrRuO₃ films on SrTiO₃
    Phys. Rev. B 81, 184418 (2010)    [A1, B5, AX]
31. B. D. Napitu and J. Berakdar
    Two-particle photoemission from strongly correlated systems: A dynamical mean-field approach
    Phys. Rev. B 81, 195108 (2010)    [B7]
32. M. Khalid, A. Setzer, M. Ziese, P. Esquinazi, D. Spemann, A. Pöppl, and E. Goering
    Ubiquity of ferromagnetic signals in common diamagnetic oxide crystals
    Phys. Rev. B 81, 214414 (2010)    [B1]
33. M. Arredondo, Q. M. Ramasse, M. Weyland, R. Mahjoub, I. Vrejoiu, D. Hesse, N. D. Browning, M. Alexe, P. Munroe, and V. Nagarajan
    Direct evidence for cation non-stoichiometry and Cottrell atmospheres around dislocation cores in functional oxide interfaces
    Adv. Mater. 22, 2430 (2010)    [A1, AX]
34. P. A. Ignatiev, N. N. Negulyaev, D. I. Bazhanov, and V. S. Stepanyuk
    Doping of cobalt oxide with transition metal impurities: Ab initio study
    Phys. Rev. B 81, 235123 (2010)    [B8]
35. C. Himcinschi, I. Vrejoiu, M. Friedrich, E. Nikulina, L. Ding, C. Cobet, N. Esser, M. Alexe, D. Rafaja, and D. R. T. Zahn
    Substrate influence on the optical and structural properties of pulsed laser deposited BiFeO₃ epitaxial films
    J. Appl. Phys. 107, 123524 (2010)    [AX, A1]
36. M. Ziese, I. Vrejoiu, and D. Hesse
    Inverted hysteresis and giant exchange bias in La_0.7Sr_0.3MnO₃ / SrRuO₃ superlattices
    Appl. Phys. Lett. 97, 052504 (2010)    [A1, B5, AX]
37. A. Lajn, H. von Wenckstern, G. Benndorf, C. P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann
    Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films
    J. Electron. Mater. 39, 595 (2010)    [B4, A2]
38. H. von Wenckstern, K. Brachwitz, M. Schmidt, C. P. Dietrich, M. Ellguth, M. Stölzel, M. Lorenz, and M. Grundmann
    The E3 defect in Mg_xZn_1-xO
    J. Electron. Mater. 39, 584 (2010)    [B4, A2]
39. J. Chai, R. J. Mendelsberg, R. J. Reeves, J. Kennedy, H. von Wenckstern, M. Schmidt, M. Grundmann, K. Doyle, T. H. Myers, and S. M. Durbin
    Identification of a deep acceptor level in ZnO due to silver doping
    J. Electron. Mater. 39, 577 (2010)    [B4]
40. M. Grundmann, T. Böntgen, and M. Lorenz
    Occurrence of Rotation Domains in Heteroepitaxy
    Phys. Rev. Lett. 105, 146102 (2010)    [A2, B3]
41. J. Zippel, M. Lorenz, A. Setzer, G. Wagner, N. Sobolev, P. Esquinazi, and M. Grundmann
    Defect-induced ferromagnetism in undoped and Mn-doped zirconia thin films
    Phys. Rev. B 82, 125209 (2010)    [B1, B6, A2]
42. Q. Xu, S. Zhou, D. Bürger, H. Hochmuth, M. Lorenz, M. Grundmann, and H. Schmidt
    Electrical Control of Magnetoresistance in Highly Insulating Co-Doped ZnO
    Jpn. J. Appl. Phys. 49, 043002 (2010)    [B6, A2]
43. M. Lorenz, H. Hochmuth, C. Grüner, H. Hilmer, A. Lajn, D. Spemann, M. Brandt, J. Zippel, R. Schmidt-Grund, H. von Wenckstern, and M. Grundmann
    Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition
    Laser Chem. 2010, 140976 (2010)    [A2, B3]
44. M. Lorenz, M. Brandt, M. Lange, G. Benndorf, H. von Wenckstern, D. Klimm, and M. Grundmann
    Homoepitaxial Mg_xZn_1−xO (0≤x≤0.22) thin films grown by pulsed laser deposition
    Thin Solid Films 518, 4623 (2010)    [A2]
45. V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, H. Schmidt, N. Ianno, and M. Schubert
    Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures
    Phys. Rev. B 81, 195307 (2010)    [A2, B3]
46. M. Brandt, M. Lange, M. Stölzel, A. Müller, G. Benndorf, J. Zippel, J. Lenzner, M. Lorenz, and M. Grundmann
    Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition
    Appl. Phys. Lett. 97, 052101 (2010)    [A2, B4]
47. H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz*, F. Schein, Z. Zhang, and M. Grundmann
    Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and their Application in Transparent Integrated Circuits
    Adv. Mater. 22, 5332 (2010)    [B4, A2]
    * Michael Lorenz; not identical with the principal investigator of project A2!
48. M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz*, F. Schein, and H. von Wenckstern
    Transparent Semiconducting Oxides: Materials and Devices
    phys. stat. sol. (a) 207, 1437 (2010)    [B4, A2]
    * Michael Lorenz; not identical with the principal investigator of project A2!
49. H. Frenzel, A. Lajn, H. von Wenckstern, and M. Grundmann
    Ultrathin gate-contacts for metal-semiconductor field-effect transistor devices: An alternative approach in transparent electronics
    J. Appl. Phys. 107, 114515 (2010)    [B4, A2]
50. M. Lange, C. P. Dietrich, C. Czekalla, J. Zippel, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, and M. Grundmann
    Luminescence Properties of ZnO/Zn_1-xCd_xO/ZnO double heterostructures
    J. Appl. Phys. 107, 093530 (2010)    [B4, A2]
51. D. Pantel and M. Alexe
    Electroresistance effects in ferroelectric tunnel barriers
    Phys. Rev. B 82, 134105 (2010)    [A1]
52. J. Barzola-Quiquia, P. Esquinazi, M. Villafuerte, S. P. Heluani, A. Pöppl, and K. Eisinger
    Origin of the giant negative photoresistance of ZnO single crystals
    J. Appl. Phys. 108, 073530 (2010)    [B1]
53. S. S. Parihar, H. L. Meyerheim, K. Mohseni, S. Ostanin, A. Ernst, N. Jedrecy, R. Felici, and J. Kirschner
    Structure of O/Fe(001)-p(1×1) studied by surface x-ray diffraction
    Phys. Rev. B 81, 075428 (2010)    [A5, A4]
54. W. Busayaporn, X. Torrelles, A. Wander, S. Tomić, A. Ernst, B. Montanari, N. M. Harrison, O. Bikondoa, I. Joumard, J. Zegenhagen, G. Cabailh, G. Thornton, and R. Lindsay
    Geometric structure of TiO₂(110)(1×1): Confirming experimental conclusions
    Phys. Rev. B 81, 153404 (2010)    [A4]
55. W. A. Adeagbo, G. Fischer, A. Ernst, and W. Hergert
    Magnetic effects of defect pair formation in ZnO
    J. Phys.: Condens. Matter 22, 436002 (2010)    [A4, B1]
56. Y. Kim, H. Han, W. Lee, S. Baik, D. Hesse, and M. Alexe
    Non-Kolmogorov-Avrami-Ishibashi switching dynamics in nanoscale ferroelectric capacitors
    Nano Lett. 10, 1266 (2010)    [A1]
57. Y. Kim, I. Vrejoiu, D. Hesse, and M. Alexe
    Reversible plasma switching in epitaxial BiFeO₃ thin films
    Appl. Phys. Lett. 96, 202902 (2010)    [A1, AX]
58. Y. Kim, H. Han, B. J. Rodriguez, I. Vrejoiu, W. Lee, S. Baik, D. Hesse, and M. Alexe
    Individual switching of film-based nanoscale epitaxial ferroelectric capacitors
    J. Appl. Phys. 108, 042005 (2010)    [A1, AX]
59. H. Han, Y. J. Park, S. Baik, W. Lee, M. Alexe, D. Hesse, and U. Gösele
    Domain structures and piezoelectric properties of Pb(Zr_{0. 2}Ti_{0. 8})O₃ nanocapacitors
    J. Appl. Phys. 108, 044102 (2010)    [A1]
60. H. L. Meyerheim, C. Tusche, A. Ernst, S. Ostanin, I. V. Maznichenko, K. Mohseni, N. Jedrecy, J. Zegenhagen, J. Roy, I. Mertig, and J. Kirschner
    Wurtzite-type CoO-nanocrystals in ultrathin ZnCoO films
    ESRF Highlights 2009, 30 (2010)    [A5]
61. S. Förster and W. Widdra
    Growth, structure, and thermal stability of epitaxial BaTiO₃ films on Pt(111)
    Surf. Sci. 604, 2163 (2010)    [A3]
62. S. Sachert, S. Polzin, K. Kostov, and W. Widdra
    Thickness dependent vibrational and electronic properties of MnO(100) thin films grown on Pt(111)
    Phys. Rev. B 81, 195424 (2010)    [A3, B8]
63. S. Abdelouahed, A. Ernst, J. Henk, I. V. Maznichenko, and I. Mertig
    Spin-split electronic states in graphene: Effects due to lattice deformation, Rashba effect, and adatoms by first principles
    Phys. Rev. B 82, 125424 (2010)    [B2]
64. L. Chotorlishvili, P. Schwab, Z. Toklikishvili, and J. Berakdar
    Driven Nonlinear Dynamics of Magnetic Nanostructures: A Semiclassical Perspective
    J. Comput. Theor. Nanosci. 7, 2430 (2010)    [B7]
65. A. Sukhov, C. Jia, P. P. Horley, and J. Berakdar
    Polarization and magnetization dynamics of a field-driven multiferroic structure
    J. Phys.: Condens. Matter 22, 352201 (2010)    [B7]
66. L. Chotorlishvili, P. Schwab , Z. Toklikishvili, and J. Berakdar
    Stochastic heating of a molecular nanomagnet
    Phys. Rev. B 82, 014418 (2010)    [B7]
67. Y. Pavlyukh and J. Berakdar
    Kohn-Sham potentials for fullerenes and spherical molecules
    Phys. Rev. A 81, 042515 (2010)    [B7]
68. Y. Pavlyukh, J. Berakdar, and W. Hübner
    Geometric rearrangement of adsorbate driven by the charge transfer
    phys. stat. sol. (b) 247, 1056 (2010)    [B7]
69. M. Schüler, Y. Pavlyukh, and J. Berakdar
    Ultrafast control of inelastic tunneling in a double semiconductor quantum well
    Appl. Phys. Lett. 97, 172103 (2010)    [B7]
70. S. Abdelouahed and J. Henk
    Strong effect of substrate termination on Rashba spin-orbit splitting: Bi on BaTiO₃(001) from first principles
    Phys. Rev. B 82, 193411 (2010)    [B2]
71. M. Hölzer, M. Fechner, S. Ostanin, and I. Mertig
    Effect of interfacial Cr on magnetoelectricity of Fe₂/CrO₂/BaTiO₃(001)
    Phys. Rev. B 81, 214428 (2010)    [B2]
72. M. Gradhand, D. V. Fedorov, P. Zahn, and I. Mertig
    Spin Hall angle versus spin diffusion length: Tailored by impurities
    Phys. Rev. B 81, 245109 (2010)    [B6]
73. P. Bose, P. Zahn, J. Henk, and I. Mertig
    Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions
    Phys. Rev. B 82, 014412 (2010)    [B6]
74. L. Gerhard, T. K. Yamada, T. Balashov, A. F. Takács, R. J. H. Wesselink, M. Däne. M. Fechner, S. Ostanin, A. Ernst, I. Mertig, and W. Wulfhekel
    Magnetoelectric coupling at metal surfaces
    Nat. Nano. 5, 792 (2010)    [B2]
75. N. F. Hinsche, M. Fechner, P. Bose, S. Ostanin, J. Henk, I. Mertig, and P. Zahn
    Strong influence of complex band structure on tunneling electroresistance: A combined model and ab initio study
    Phys. Rev. B 82, 214110 (2010)    [B6]
76. H. von Wenckstern, J. Zippel, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann
    Two-dimensional electron gases in MgZnO/ZnO heterostructures
    AIP Conf. Proc. 1199, 99 (2010)    [B4, A2]
77. H. von Wenckstern, A. Lajn, A. Laufer, B. K. Meyer, H. Hochmuth, M. Lorenz, and M. Grundmann
    Ag related defect state in ZnO thin films
    AIP Conf. Proc. 1199, 122 (2010)    [B4, A2]
78. M. Lorenz*, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann, P. Barquinha, R. Martins, and E. Fortunato
    Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
    Appl. Phys. Lett. 97, 243506 (2010)    [B4, A2]
    * Michael Lorenz; not identical with the principal investigator of project A2!

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